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High Performance Instrumentation Quality GaN Hall Sensor X113

Instrumentation Quality

Excellent linearity error : 0.05%

TC of sensitivity: 30ppm/K

Max Range : 15T

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COLIY®--Excellent Solution for Magnetic  Field Measurement

High Magnetic Field (0-20T) Measurement

Model

Principle

Type

Axis

DC Accuracy

Range

Resolution

G80

HALL

Handheld

1

2%

2T

10μT

G81

HALL

Handheld

1

0.8%

10T

1μT

G93

HALL

Handheld

3

1%, 0.5%

20T

10μT

G401

HALL

Desktop

1

0.05%

20T

1μT

X113

HALL

Sensor

1

0.05%

15T

TC of sensitivity: 30ppm/K

Low Magnetic Field(0- 2mT) Measurement

Gaussmeters for Low Magnetic Field

Model

Principle

Type

Axis

DC Accuracy

Range

Resolution

GF601

Fluxgate

Handheld

1

0.5%

1mT

0.1nT

GF603

Fluxgate

Handheld

3

0.25%

1mT

0.1nT

Note: 1T= 10kG; 1mT= 10G;  1μT= 10mG;   1nT= 10μG



High Performance Instrumentation Quality GaN Hall Sensor X113  



Features: 

Instrumentation Quality

Excellent linearity error : 0.05%

TC of sensitivity: 30ppm/K

Max Range : 15T

 Typical Applications

Current and power measurement

Magnetic field measurement

Control of brushless DC motors

Rotation and position sensing

Measurement of diaphragm


The third-generation semiconductor gallium nitride (GaN) Hall sensor X113, built into a SMT package (SOT-143), has the characteristics of good temperature stability, high linearity and low noise, which is superior to the second-generation semiconductor gallium arsenide (GaAs) sensor technology.

Hall sensor X113 is outstanding for its excellent linearity error 0.05% and very low temperature coefficients 30ppm/K. While the sensor is operated with constant current, the output hall voltage is directly proportional to a magnetic field acting perpendicular to the surface of the sensor.

 

Maximum Ratings

Parameter

Symbol

Value

Unit

Operating temperature

 TA

 – 40 ~ + 100

°C

Storage temperature

 Tstg

 – 60 ~ + 130

°C

Supply current

 I1

 30

mA

Thermal conductivity, soldered in air

 GthC 

 GthA

 ≥2.2

 ≥1.5

mW/K 

mW/K

 

Characteristics (TA = 25℃)

Parameter

Condition

MIN

TYP

MAX

Unit

Nominal supply current

I1N


20

30 

mA

Open-circuit hall voltage

I1 = I1N, B = 0.1 T

V20

7.0


9.0 

mV

Ohmic offset voltage

I1 = I1N, B = 0 T

VR0


0.1

0.3 

mV

Active area (in the sensor center)



0.07


mm2

Linearity of Hall voltage

B = 0.1~2.0 T

FL


0.05


%

Input resistance      B = 0 T

R10

60


75 

Ω

Output resistance    B = 0 T

R20

60


75 

Ω

Temperature coefficient of the open-circuit Hall-voltage

I1 = I1N,  B = 0.5 T

TCV20


-30


ppm/K

Temperature coefficient of the internal resistance   B = 0 T

TCR10, R20


0.08


%/K

Temperature coefficient of ohmic offset voltage

I1 = I1N,  B = 0 T

TCVR 0

1


4

μT/K

Noise figure

F


10


dB

Range


10


15 

Tesla




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